Growth of homoepitaxial diamond doped with nitrogen for electron emitter

Diamond and Related Materials

Volumn 11, Issue 2, 2002, Pages 257-261

  Yamada, Takatoshi ^a   Sawabe, Atsuhito ^a   Koizumi, Satoshi ^b   Kamio, Takaaki ^c   Okano, Ken ^c  

^a AOYAMA GAKUIN UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c INTERNATIONAL CHRISTIAN UNIVERSITY   (Japan)

Author keywords

Electron emission; Field emitter; Homoepitaxy; Nitrogen doped

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; DOPING (ADDITIVES); ELECTRON EMISSION; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; NITROGEN; RAMAN SCATTERING;

THRESHOLD EMISSIONS;

DIAMOND FILMS;

DIAMOND; ELECTRON; EMISSION;

EID: 0036473440     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(01)00720-8     Document Type: Article

References (19)