The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy

Journal of Crystal Growth

Volumn 235, Issue 1-4, 2002, Pages 411-414

  Wang, Zhuo ^a   Sun, Daliang ^a   Hu, Jifan ^a   Cui, Deliang ^a   Xu, Xiaohong ^a   Wang, Dong ^a   Zhang, Yin ^a   Wang, Min ^a   Wang, Hong ^a   Chen, Huanchu ^a   Fang, Changshui ^a   Liu, Xunchun ^b   Wei, Ke ^b  

^a SHANDONG UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

A1. Atomic force microscopy; A1. Reactive ion etching; A3. Metallorganic chemical vapor deposition

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; DIELECTRIC LOSSES; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE PROPERTIES;

FILM ORIENTATION;

THIN FILMS;

EID: 0036467304     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01923-6     Document Type: Article

References (9)