Amphoteric behavior of Ge dopants in In0.5Ga0.5P epilayers grown on GaAs(100) substrates

Journal of Physics and Chemistry of Solids

Volumn 62, Issue 3, 2001, Pages 607-611

  Yoon, I T ^a   Han, S Y ^b   Park, H L ^b   Kim, T W ^c  

^a S   (South Korea)

^b Yonsei University   (South Korea)

^c Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EXCITONS; HALL EFFECT; IONIZATION OF SOLIDS; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

INDIUM GALLIUM PHOSPHIDE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035284067     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(00)00224-9     Document Type: Article

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