Junction area dependence of tunneling magnetoresistance

Journal of Magnetism and Magnetic Materials

Volumn 239, Issue 1-3, 2002, Pages 129-131

  Lee, S S ^a   Wang, S X ^b   Park, C M ^b   Rhee, J R ^c   Yoon, C S ^d   Chang, P J ^d   Kim, C K ^d  

^a Sangji University   (South Korea)

^b Stanford University   (United States)

^c Sookmyung Women's University   (South Korea)

^d Hanyang University   (South Korea)

Author keywords

Natural oxidation; Resistance area products (R A); Spin dependent tunneling; Tunneling magnetoresistance

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ION BEAM ASSISTED DEPOSITION; MAGNETIC ANISOTROPY; MAGNETRON SPUTTERING; MULTILAYERS; OXIDATION; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

TUNNELING MAGNETORESISTANCE (TMR);

MAGNETORESISTANCE;

EID: 0036465362     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(01)00590-X     Document Type: Article

References (7)