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Applied Physics Letters

Volumn 74, Issue 17, 1999, Pages 2528-2530

Spin-dependent tunneling junctions with Fe55Ni45 electrodes and in situ resistive measurement of oxide growth

(3) Wee, Andrew T A a Sin, Kyusik a Wang, Shan X a

a Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRODES; ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; IRON COMPOUNDS; MAGNETIC HYSTERESIS; MAGNETIC MOMENTS; MAGNETORESISTANCE; MAGNETRON SPUTTERING; OXIDATION; SPUTTER DEPOSITION; SUBSTRATES;

CATION HOPPING CURRENTS; FUCHS-SONDHEIMER MODELS; PLASMA OXIDATION; SPIN-DEPENDENT TUNNELING JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0032606820 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123896 Document Type: Article

Times cited : (8)

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