Influence of quantum well states on transport properties of double barrier junctions

Journal of Magnetism and Magnetic Materials

Volumn 240, Issue 1-3, 2002, Pages 146-148

  Chshiev, M ^a   Stoeffler, D ^a   Vedyayev, A ^a,b,c   Ounadjela, K ^a  

^a INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

^c CEA GRENOBLE   (France)

Author keywords

Thin films; Transport properties; Tunneling

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; MAGNETIC RESONANCE; MAGNETIC THIN FILMS; MAGNETORESISTANCE;

MAGNETIC TUNNEL JUNCTIONS (MTJ); TUNNEL MAGNETORESISTANCE (TMR);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036464877     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(01)00767-3     Document Type: Article

References (8)