SiGe-base heterojunction bipolar transistors: Physics and design issues

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 13-16

  Patton, G L ^a   Stork, J M C ^a   Comfort, J H ^a   Crabbe, E F ^a   Meyerson, B S ^a   Harame, D L ^a   Sun, J Y C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SILICON GERMANIUM ALLOYS;

BASE RESISTANCE; BIPOLAR CIRCUITS; JUNCTION CAPACITANCES; SILICON BIPOLAR CIRCUITS;

TRANSISTORS, BIPOLAR;

EID: 0025575664     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)