A direct-conversion receiver IC for WCDMA mobile systems

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 61-64

  Reynolds, S ^a   Floyd, B ^a   Beukema, T ^a   Zwick, T ^a   Pfeiffer, U ^a   Ainspan, H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BIT ERROR RATE; CODE DIVISION MULTIPLE ACCESS; MICROPROCESSOR CHIPS; MOBILE TELECOMMUNICATION SYSTEMS; RADIO RECEIVERS; SENSITIVITY ANALYSIS;

BASEBAND AMPLIFIERS;

INTEGRATED CIRCUIT LAYOUT;

EID: 0036437922     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Third-Generation Partnership Project (3GPP), "UE Radio Transmission and Reception (FDD)", Technical Specification 25.101, Vol. 3.0.1, April 2000.
2. D.Y.C. Lie, J. Kennedy, D. Livezey, B. Yang, T. Robinson, N. Sornin, T. Beukema, L.E. Larson, A. Senior, J. Blonski, N. Swanberg, P. Pawlowski, D. Gonya, X. Yuan, J. Mecke, and H. Zamat, "A Direct-Conversion W-CDMA Front-End Receiver Chip with LO leakage of-105dBm in a 0.25um SiGe BiCMOS Technology," accepted for publication and to appear in 2002 Radio Frequency Integrated Circuit Symposium, Digest of Papers, Seattle, Washington, USA, June 2-4, 2002.
3. H. Fukui, "The Noise Performance of Microwave Transistors," IEEE Trans. Electron Devices, vol. ED-13, pp. 329-341, March 1966.
4. S.P. Voinigescu, M.C. Maliepaard, J.L. Showell, G.E. Babcock, D. Marchesan, M. Schroter, P. Schvan, and D.L. Harame, "A Scalable High-Frequency Noise Model for Bipolar Transistors with Application to Optimal Transistor Sizing for Low-Noise Amplifier Design," IEEE J. Solid State Circuits, vol. 32, no. 9, pp. 1430-1439, Sept 1997.