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Volumn 487, Issue 1-3, 2001, Pages 39-48
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Atomic structure and growth of the Cu/Si(1 1 1)-"5 × 5" phase
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Author keywords
Copper; Epitaxy; Growth; Low energy electron diffraction (LEED); Scanning tunneling microscopy; Silicon
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Indexed keywords
ANNEALING;
ATOMIC PHYSICS;
COPPER;
EPITAXIAL GROWTH;
LOW ENERGY ELECTRON DIFFRACTION;
MATHEMATICAL MODELS;
MONOLAYERS;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING SILICON;
ATOMIC STRUCTURE;
SURFACE STRUCTURE;
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EID: 0035919909
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(01)00895-0 Document Type: Article |
Times cited : (22)
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References (13)
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