Excimer laser annealing of ion-implanted 6H-silicon carbide

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Hishida, Y ^a   Watanabe, M ^a   Nakashima, K ^b   Eryu, O ^b  

^a Ion Eng Res Institute Corporation   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; EXCIMER LASERS; ION IMPLANTATION; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS;

LASER ANNEALING;

SILICON CARBIDE;

EID: 0033718560     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)

1. A. Suzuki, H. Ashida, N. Furui, K. Memeno, and H. Matsunami, Jpn. J. Appl. Phys., 21 (1982), p. 579.
2. T. Kimoto, N. Inoue, and H. Matsunami, phys. stat. sol. (a), 162 (1997), p. 263.
3. S. Ahmed, C. J. Barbero, and T. W. Sigmon, Appl. Phys. Lett., 66 (1995), p. 712.