A solution to resist poisoning in the integration of 248 and 193 nm photoresist with low-k dielectric materials

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691, Issue 1, 2002, Pages 296-303

  Satyanarayana, Sri ^a   Brennan, K ^a,b   Jacobs, T ^a,c   Berger, R ^a  

^a SEMATECH   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c Philips Assignee   (Netherlands)

Author keywords

Low k dielectric; Photoresist; Resist Poisoning

Indexed keywords

DIELECTRIC MATERIALS; MASKS; PERMITTIVITY; PLASMA ETCHING; SILICON WAFERS;

RESIST POISONING;

PHOTORESISTS;

EID: 0036414407     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474624     Document Type: Article

References (5)

1. L.F. Thompson et al., "Introduction to Microlithography" Americal Chemical Society, Washington DC, 213, 1994.
2. S. Lin et al., "Low k dielectrics Characterization for Damascene Integration," Proceedings of the International Interconnect technology Conference June 2001, p146-148.
3. J.C. Lin et al., "Via First Dual Damascene Integration of Nanoporous Ultra Low-k Material," Proceedings of the International Interconnect technology Conference, June 2002.
4. T. Jacobs et al., Internal Communications.
5. M. Tsai, Internal Communications. ISMT Tech transfer 6721.