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Volumn 4691 II, Issue , 2002, Pages 861-870

The effect of scattering bar assist features in 193 nm lithography

Author keywords

[No Author keywords available]

Indexed keywords

LIGHTING; MASKS; OPTICAL RESOLVING POWER; PROCESS CONTROL; SCANNING;

EID: 0036410382     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474636     Document Type: Article
Times cited : (5)

References (2)
  • 1
    • 0033683077 scopus 로고    scopus 로고
    • Comparison of OPC rules and common process windows for 130 nm features using binary and attenuated phase shift masks
    • M. Reilly, et al., "Comparison of OPC rules and common process windows for 130nm features using binary and attenuated phase shift masks", Proc. SPIE, 2000, Vol 4000, pp. 1209-1222.
    • (2000) Proc. SPIE , vol.4000 , pp. 1209-1222
    • Reilly, M.1
  • 2
    • 0035759031 scopus 로고    scopus 로고
    • ArF lithography options for 100 nm technologies
    • G. Vandenberghe, et al, "ArF Lithography Options for 100 nm Technologies", Proc. SPIE, 2001, Vol 4346, pp. 179-190.
    • (2001) Proc. SPIE , vol.4346 , pp. 179-190
    • Vandenberghe, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.