Model based OPC considering process window aspects - A study

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 II, Issue , 2002, Pages 1097-1105

  Schulze, Steffen ^a   Park, O'seo ^a   Zimmermann, Rainer ^b   Chen, Ming Jui ^c   Lacour, Pat ^d   Sahouria, Emile ^d   Granik, Yuri ^d   Cobb, Nick ^d  

^a INFINEON TECHNOLOGIES   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^d MENTOR GRAPHICS CORPORATION   (United States)

Author keywords

Optical proximity correction; Process window; Variable threshold model

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; IMAGING TECHNIQUES; MASKS; PHASE SHIFT;

VARIABLE THRESHOLD MODEL (VTRE);

LITHOGRAPHY;

EID: 0036410150     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474489     Document Type: Article

References (2)

1. Zach, Franz X.; Samuels, Donald J.; Thomas Alan C.; Butt, Shahid A.; "Process dependencies of optical proximity corrections", Proc. SPIE Vol. 4346, p. 113-118, Optical Microlithography XIV.
2. Randall, John; Ronse, Kurt; Marschner, Thomas; Goethals, Mieke; Ercken, Monique; "Variable threshold resist models for lithography simulation", Proc. SPIE Vol. 3679, p 176-182, Optical Microlithography XII.