Hot electrons : A myth or reality?

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4746 I, Issue , 2002, Pages 563-569

  Arora, Vijay K ^a  

^a WILKES UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIFFUSION; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; QUANTUM THEORY; TEMPERATURE;

DIFFUSION COEFFICIENT DEGRADATION; EINSTEIN-RELATION TEMPERATURE; ELECTRIC FIELD INDUCED QUANTUM EMISSION;

ELECTRONS;

EID: 0036407892     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Arora, V. K., High Field Distribution and Mobility in Semiconductors, Jpn. J. Appl. Phys., 24 (1985) 537.
2. Arora, V. K., Nonlinear Quantum Transport in Semiconductors, J. Appl. Phys., 54 (1983) 824.
3. Arora, V. K., Microelectronic J., Quantum Engineering of Nanoelectronic Devices: The Role of Quantum Emission in Limiting Drift Velocity and Diffusion Coefficient, 31 (2000) 853.
4. Arora, V. K., unpublished.
5. Omar, M. A, and Reggiani, L., Drift and diffusion of charge carriers in silicon and their empirical relation to the electric field, Solid State Electronics, 30(7) (1987) 693.
6. Rothwarf, A., Electron Device Letters, Comment on "A Theory of Enhanced Impact Ionization Due to the Gate Electric Field and Mobility Degradation in the Inversion Layer, EDL-7(7) (1986) 457.
7. Rothwarf, A., A New Quantum Mechanical Channel Mobility Model for Si MOSFET, Electron Device Letters, EDL-8(10) (1987) 499.
8. Fairus, A. T. M., and Arora, V. K., Quantum engineering of nanoelectronic devices: the role of quantum confinement in mobility degradation, Microelectronic J., 32 (2000) 679.