Charge-based deep level transient spectroscopy of semiconducting and insulating materials

Materials Research Society Symposium - Proceedings

Volumn 699, Issue , 2002, Pages 219-223

  Polyakov, V I ^a   Rukovishnokov, A I ^a   Rossukanyi, N M ^a   Druz, B ^b  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^b VEECO INSTRUMENTS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINA; CAPACITANCE; ELECTRIC INSULATING MATERIALS; NICKEL COMPOUNDS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING DIAMONDS; SILICON; SINGLE CRYSTALS;

CHARGE-BASED DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRICAL ACTIVE DEFECTS; TRAPPING CENTERS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 0036389969     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. V.I. Polyakov, P.I. Perov, O.N. Ermakova, M.G. Ermakov, A.I. Rukovishnikov, V.I. Sergeev, Sov. Phys. Semicond., 23, 1, 76 (1989).
2. V.I. Polyakov, N.M. Rossukanyi, A.I. Rukovishnikov, S.M. Pimenov, A.V. Karabutov, V.I. Konov, J. Applied Physics, 84, 5, 2882 (1998).
3. V.I. Polyakov, A.I. Rukovishnikov, N.M. Rossukanyi, et all, Mat. Res. Soc. Symp. Proc., 442, 687 (1997).
4. V.I. Polyakov, A.I. Rukovishnikov, and N.M. Rossukanyi, Proc. of ECS Conf., Gawaii, Honolulu, 99-32, 269-274 (2000).
5. D.V. Lang, J. Applied Physics, 45, 3023 (1974).
6. V.I. Polyakov, A.I. Rukovishnikov, N.M. Rossukanyi, and V.G. Ralchenko, Diamond and Related Materials, 10, 593 (2001).
7. F. Fontaine, J. Applied Physics, 85, 3, 1409 (1999).