Influence of the technology on the destruction effects of semiconducters by impact of EMP and UWB pulses

IEEE International Symposium on Electromagnetic Compatibility

Volumn 1, Issue , 2002, Pages 87-92

  Camp, Michael ^a   Garbe, Heyno ^a   Nitsch, Daniel ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

CMOS; EMP; Semiconductor; Susceptibility; TTL; UWB

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC INVERTERS; ELECTROMAGNETIC FIELDS; LOGIC DEVICES; NAND CIRCUITS; SEMICONDUCTOR MATERIALS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

DESTRUCTION EFFECTS;

MAGNETIC SUSCEPTIBILITY;

EID: 0036385024     PISSN: 01901494     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. D.Nitsch, J.Schlüter, H.J.Kitschke, "Generierung und Vorteile von Ultrawideband-Impulsen", EMV99, Mannheim, Germany
2. C.Braun, "Aufbau eines breitbandigen Wellenleiters für NEMP Modell Simulationen", INT Bericht Okt. 84
3. D.Nitsch, M.Camp, "UWB and EMP Susceptibility of Modern Microprocessorboards", EMC Europe, Brugge, Sept. 2000
4. M.Camp, H.Garbe, D.Nitsch, "UWB and EMP Susceptibility of Modern Electronics", IEEE EMC, Montreal, August 13-17, 2001, ISBN: 0-7803-6569-0, pp. 1015-1020
5. M.Camp, "Empfindlichkeit von Elektronik gegen EMP und UWB - Phase II", WIS Bericht, Okt. 01, AN:005.H-0 A064, AG:UT 243-C