Growth of GaN epilayers on Si(111) substrates using multiple buffer layers

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 105-110

  Hageman, P R ^a   Haffouz, S ^a   Grzegorczk, A ^a   Kirilyuk, V ^a   Larsen, P K ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; EXCITONS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR SUPERLATTICES; SURFACE TREATMENT; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

DONOR BOUND EXCITON; EPILAYERS; HALL MEASUREMENT; MULTIPLE BUFFER LAYERS; PHOTOLUMINESCENCE SPECTRUM;

EPITAXIAL GROWTH;

EID: 0036375650     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. GaN and related alloys-1999