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Volumn 15, Issue 4, 2002, Pages 643-654
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A new photoresist material for 157 nm lithography-2
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Author keywords
157 nm lithography; Chemically amplified photoresist; Photoacid generator; Poly(alkyl vinyl sulfonate)s
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Indexed keywords
4 (1,1,1,3,3,3 HEXAFLUORO 2 HYDROXYPROPYL)STYRENE;
NITRILE;
POLY(2,2,2 TRIFLUOROETHYLVINYL SULFONATE);
POLY(METHYLVINYL SULFONATE);
POLYMER;
STYRENE DERIVATIVE;
SULFONIC ACID DERIVATIVE;
UNCLASSIFIED DRUG;
ARTICLE;
DENSITY;
GLASS TRANSITION TEMPERATURE;
LITHOGRAPHY;
MOLECULAR WEIGHT;
PHOTOACID GENERATOR;
PHOTOLYSIS;
POLYMERIZATION;
PROTON NUCLEAR MAGNETIC RESONANCE;
SOLUBILITY;
TECHNOLOGY;
ULTRAVIOLET RADIATION;
VACUUM;
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EID: 0036361950
PISSN: 09149244
EISSN: None
Source Type: Journal
DOI: 10.2494/photopolymer.15.643 Document Type: Article |
Times cited : (18)
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References (37)
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