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Volumn 14, Issue 5, 2002, Pages 231-237
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Characteristics of plasmaless dry etching of silicon-related materials using chlorine trifluoride gas
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Author keywords
Chlorine trifluoride; Isotropic etching; Plasmaless dry etching; Silicon; Silicon dioxide
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Indexed keywords
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EID: 0036353662
PISSN: 09144935
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (16)
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References (12)
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