A new isotropic dry etching using ClF3 gas for Si micromachining

Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering

Volumn 66, Issue 6, 2000, Pages 871-875

  Ueda, Tetsuo ^a   Kuribayashi, Katsutoshi ^a  

^a NONE

Author keywords

ClF3 gas; Dry etching; Isotropic etching; Micromachining; Plasmaless etching; Silicon

Indexed keywords

EID: 0010193546     PISSN: 09120289     EISSN: None     Source Type: Journal    
DOI: 10.2493/jjspe.66.871     Document Type: Article

References (5)

1. R. Toda, K. Minami, and M. Esashi : Study of Xenon Difluoride Silicon Etch for Thin Beam Bulk Micromachining, Tech. Digest of the 14th Sensor Symp., (1996) 175.
2. Y. Saito, O. Yamaoka, and A. Yoshida : Plasmaless cleaning process of silicon surface using chlorine trifluoride, Appl.Phys.Lett., 56, 12, (1990) 1119.
3. D.E. Ibbotson, J.A. Mucha, and D.L. Flamm : Plasmaless dry etching of silicon with fluorine-containing compounds, J.Appl.Phys., (1984) 2939.