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Volumn 11, Issue 2, 2002, Pages 156-162

Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts

Author keywords

Inhomogeneity; Metal semiconductor contact; Schottky barrier height

Indexed keywords


EID: 0036331055     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/11/2/310     Document Type: Article
Times cited : (9)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.