Theoretical calculations on the atomic and electronic structure of β-SiC(110) surface

Chinese Science Bulletin

Volumn 47, Issue 10, 2002, Pages 804-809

  Xie, Changkun ^a   Xu, Pengshou ^a   Xu, Faqiang ^a   Pan, Haibin ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

FPLAPW method; SiC; Surface atomic structure; Surface electronic structure

Indexed keywords

CARBON; SILICON;

ARTICLE; ATOMIC PARTICLE; CALCULATION; CHEMICAL BINDING; CRYSTAL; ELECTRONICS; MODEL; ROTATION; SEMICONDUCTOR; STRUCTURE ANALYSIS; SURFACE PROPERTY; THEORY;

EID: 0036317730     PISSN: 10016538     EISSN: None     Source Type: Journal    
DOI: 10.1360/02tb9181     Document Type: Article

References (21)

1. Progress in SiC: From material growth to commercial device development
2. Electronic band structure of SiC Ploytypes: A discussion of theory and experiment
3. Band gap narrowing in n-type and p-type 3C-, 2H-, 6H-SiC, and Si
4. Structure and properties of cubic silicon carbide (100) surfaces: A review
5. Ideal and relaxed surfaces of SiC
6. Structures and energetics for polar and nonpolar SiC surface relaxations
7. Ab initio calculation of the atomic and electronic structure for the clean 3C SiC(110) 1 × 1 surface
8. Ab initio calculation of SiC(110) and GaAs(110) surfaces: A comparative study and the role of ionicity
9. Ab initio LMTO calculation of surface localized and resonance states of the SiC(110) zinc-blende surface
10. Full-potential linearized augmented plane wave programs for crystalline system
11. Generalized gradient approximation made simple
12. The compressibility of media under extreme pressures
13. Ab initio pseudopotential study of structural and high-pressure properties of SiC
14. Electronic structure and bonding at SiC/AlN and SiC/BP interfaces
15. Calculated and measured uv reflectivity of SiC polytypes
16. In numerical data and functional relationships in science and technology
17. Relaxation of zincblende (110) surfaces
18. First-principles ionicity scales, Part I: Charge asymmetry in the solid state
19. Calculated atomic structures and electronic properties of GaP, InP, GaAs, and InAs(110) surfaces