Atomic and electronic structure analysis of Σ = 3 incoherent twin boundaries in β-SiC

Journal of Electron Microscopy

Volumn 51, Issue SUPPL., 2002, Pages

  Tanaka, Koji ^a   Kohyama, Masanori ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

EELS; First principles; HREM; Incoherent twin boundary; SCTB; SiC

Indexed keywords

ANGUILLIFORMES;

BINARY ALLOYS; CRYSTAL ATOMIC STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONIC STRUCTURE; ENERGY DISSIPATION; GRAIN BOUNDARIES; HIGH RESOLUTION ELECTRON MICROSCOPY;

ELECTRON ENERGY-LOSS SPECTROSCOPIES; FIRST PRINCIPLES; GRAIN-BOUNDARY ENERGY; INCOHERENT TWIN; INCOHERENT TWIN BOUNDARY; KEYWORD >-SIC; SCTB; SIX-MEMBERED RINGS; STRUCTURAL UNIT; TWIN BOUNDARIES;

SILICON CARBIDE;

EID: 0036298927     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/51.supplement.s265     Document Type: Conference Paper

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