Tight-binding calculations of the {211}∑ = 3 boundary in diamond

Interface Science

Volumn 4, Issue 3-4, 1997, Pages 157-167

  Kohyama, M ^a   Ichinose, H ^a   Zhang, Y ^a   Ishida, Y ^a   Nakanose, M ^a  

^a OSAKA NATIONAL RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DIAMONDS; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY;

TIGHT-BINDING METHOD;

ELECTRONIC STRUCTURE;

EID: 0030314448     PISSN: 09277056     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf00240238     Document Type: Article

References (21)