Rise time analysis of mobile circuit

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 5, Issue , 2002, Pages 864-867

  Uemura, Tetsuya ^a   Mazumder, Pinaki ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOOLEAN FUNCTIONS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS;

MONOSTABLE BISTABLE TRANSISTOR LOGIC ELEMENT; RESONANT TUNNEL DIODES; RISE TIME ANALYSIS;

TUNNEL DIODES;

EID: 0036295976     PISSN: 02714310     EISSN: None     Source Type: Journal    
DOI: 10.1109/ISCAS.2002.1010842     Document Type: Article

References (6)

1. High-speed and low-power operation of a resonant tunneling logic gate MOBILE
2. Resonant-tunneling-diode circuits
3. Analysis of switching time of monostable-bistable transition logic elements based on simple model calculation
4. Operation speed consideration of resonant tunneling logic gate based on circuit simulation
5. A new resonant tunneling logic gate employing monostable-bistable transition
6. Device and circuit simulation of quantum electronic devices