A study of the mechanism of the growth and shrinkage of stacking fault tetrahedra using the fluctuation of their size under electron irradiation

Journal of Electron Microscopy

Volumn 51, Issue SUPPL., 2002, Pages

  Arai, S ^b   Orihara, H ^b   Kiritani, M ^c   Arakawa, K ^a   Ono, K ^a  

^a SHIMANE UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c HIROSHIMA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Copper; Electron microscopy; Fluctuation; Point defect; Radiation effect; Stacking fault tetrahedron

Indexed keywords

ELECTRON IRRADIATION; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRONS; GEOMETRY; POINT DEFECTS; SHRINKAGE; STACKING FAULTS; TIME SERIES ANALYSIS; VIDEO RECORDING;

ABSORPTION RATES; DEFECT REACTIONS; EDGE LENGTH; FLUCTUATION; HIGH-ENERGY ELECTRON IRRADIATION; REACTION UNDER; SPATIAL FLUCTUATION; STACKING FAULT TETRAHEDRON; TEMPORAL AND SPATIAL; TEMPORAL FLUCTUATION;

COPPER;

EID: 0036289755     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/51.supplement.s225     Document Type: Conference Paper

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14. The growth and annealing of stacking fault tetrahedra
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