Structural observation of Pd silicide islands on Si (111) surfaces with UHV-TEM/STM

Journal of Electron Microscopy

Volumn 51, Issue SUPPL., 2002, Pages

  Tanaka, Miyoko ^a   Takeguchi, Masaki ^a   Yasuda, Hidehiro ^a   Furuya, Kazuo ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Palladium; Scanning tunnelling microscopy; Silicide; Silicon; Surface structure; Transmission electron microscopy

Indexed keywords

DEPOSITION; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISSIPATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METAL SUBSTRATES; PALLADIUM; SCANNING ELECTRON MICROSCOPY; SILICIDES; SILICON; SURFACE STRUCTURE;

COMBINED SYSTEM; ELECTRON ENERGY-LOSS SPECTROSCOPIES; GROWTH PROCESS; HEIGHT DISTRIBUTION; HIGH-RESOLUTION TEM; SI (1 1 1); SILICIDE LAYERS; SPECTRA'S; STRUCTURAL OBSERVATIONS; ULTRA-HIGH-VACUUM TRANSMISSION ELECTRON MICROSCOPY;

SCANNING TUNNELING MICROSCOPY;

EID: 0036289428     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/51.supplement.s45     Document Type: Conference Paper

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2. 2 epitaxial structures
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7. 2 on Si(111) studied with UHV electron microscopy
8. In-situ UHV electron microscope study of metal-silicon surfaces
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13. AUGER-Electron spectroscopy study of low coverage palladium adsorption on Si(111)
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15. 2Si(111) Si interface
16. Analytical ultrahigh-vacuum transmission electron microscopy applied to the study of Pd2Si island formation on Si(111) surfaces
17. Comparative AES and RHEED study of the formation of Pd silicide on clean and oxide covered Si(100) and (111) surfaces