Thermal impedance of new power semiconductor modules using AlN substrates

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 2, Issue , 1998, Pages 1026-1030

  Mitic, G ^a   Sommer, K H ^a   Dieci, D ^a   Lefranc, G ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; HEAT RESISTANCE; PARTIAL DISCHARGES; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL CYCLING;

ALUMINUM NITRIDE; INSULATED GATED BIPOLAR TRANSISTORS (IGBT); POWER SEMICONDUCTORS;

POWER ELECTRONICS;

EID: 0032314690     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)