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Journal of the Electrochemical Society

Volumn 149, Issue 1, 2002, Pages

Role of grain boundaries in exceptionally H2 sensitive highly oriented laser ablated thin films of SnO2

(3) Gnanasekar, K I a Rambabu, B a Langry, Kevin C b

a SOUTHERN UNIVERSITY (United States)

b LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; FILM GROWTH; GRAIN BOUNDARIES; PARTIAL PRESSURE; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; TIN COMPOUNDS;

POLYCRYSTALLINE SEMICONDUCTORS;

THIN FILMS;

EID: 0036229109 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1425799 Document Type: Article

Times cited : (9)

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