Low voltage FE-STEM for characterization of state-of-the-art silicon SRAM

Journal of Electron Microscopy

Volumn 51, Issue 1, 2002, Pages 53-57

  Nakagawa, Mine ^a   Dunne, Robert ^c   Koike, Hidemi ^b   Sato, Mitsugu ^b   Pérez Camacho, Juan J ^c   Kennedy, Barry J ^c  

^a HITACHI LTD   (Japan)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

^c Intel Ireland Ltd   (Ireland)

Author keywords

FIB; In lens FESEM; STEM

Indexed keywords

ARTICLE;

FIELD EMISSION MICROSCOPES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BEAMS; STATIC RANDOM ACCESS STORAGE;

DIFFERENT THICKNESS; FIELD EMISSION SCANNING; FOCUSED IONS BEAMS; IN-LENS FESEM; LOW VOLTAGES; LOW-VOLTAGE FIELD EMISSION; SCANNING TRANSMISSION ELECTRON MICROSCOPY; STATE OF THE ART; STATIC RANDOM ACCESS MEMORY; STEM;

SCANNING ELECTRON MICROSCOPY;

EID: 0036215915     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/51.1.53     Document Type: Article

References (6)

1. Development of the HD-2000 high voltage field emission scanning electron microscope
2. Characterization of multi-component polymer systems by field emission-STEM at low accelerating voltage
3. Direct observation of micro-morphology on XLPE insulation
4. A new focused-ion-beam micro sampling technique for TEM observation of site-specific areas
5. High position accuracy TEM specimen preparation using a FIB-TEM compatible system
6. Transmission electron microscope sample preparation using a focused ion beam