Direct extraction of linear HBT-model parameters using nine analytical expression blocks

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 1 I, 2002, Pages 218-221

  Ouslimani, Achour ^a   Gaubert, Jean ^a   Hafdallah, Habiba ^a   Birafane, Ahmed ^a   Pouvil, Pierre ^a   Leier, H ^b  

^a ENSEA   (France)

^b DAIMLER AG   (Germany)

Author keywords

Analytical method; Heterojunetion bipolar transistor; Parameter extraction

Indexed keywords

ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; NONLINEAR EQUATIONS; OPTIMIZATION; PARAMETER ESTIMATION;

EXTRINSIC ELEMENTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036205173     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.981270     Document Type: Article

References (10)

1. Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
2. Parameter extraction technique for HBT equivalent circuit using cutoff mode measurement
3. A new parameter extraction technique for small-signal equivalent circuit of polysilicon emitter bipolar transistors
4. Extraction of the Inp/GaInAs heterojunction bipolar transistor small-signal equivalent circuit
5. Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured S-parameters
6. Direct extraction of equivalent circuit parameters for heterojunction bipolar transistor
7. DC to high-frequency HBT-model parameter evaluation using impedance block conditioned optimization
8. A semianalytical parameter-extraction procedure for HBT equivalent circuit
9. Parameter extraction method for heterojunction bipolar transistors
10. New method far determining parasitic access inductances of high frequency on wafer coplanar heterojunction bipolar transistors