Comparative study of TeraHertz generation in wide band gap bulk semiconductors

Materials Science Forum

Volumn 384-385, Issue , 2002, Pages 205-208

  Starikov, E ^a   Shiktorov, P ^a   Gruzinskis V ^a   Reggiani, L ^a   Varani, L ^a   Vaissiere J C ^a   Zhao, J H ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

Monte Carlo simulation; Nitrides; TeraHertz generation

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC FIELDS; LIGHT EMISSION; LOW TEMPERATURE PROPERTIES; MICROWAVE POWER TRANSMISSION; MONTE CARLO METHODS; NITRIDES; SEMICONDUCTING INDIUM PHOSPHIDE;

CARRIER ACCELERATION; OPTICAL PHONON EMISSION; TERAHERTZ RADIATION GENERATION; WIDE BAND GAP BULK SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS;

EID: 0036171467     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.384-385.205     Document Type: Conference Paper

References (3)

1. Millimeter range radiation generation under the transit time resonance of electrons in InP in strong electric field
2. Monte Carlo simulation of the generation of terahertz radiation in GaN
3. Transient electron transport in wurtzite GaN, InN, and AIN