Time domain and frequency analysis of RTS noise in deep submicron SiGe HBTs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 435-440

  Raoult, J ^a   Militaru, L ^a   Verdier, J ^a   Souifi, A ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Bipolar transistor; Characterization; Deep levels; Low frequency noise; RTS noise

Indexed keywords

ACTIVATION ENERGY; ELECTRON TUNNELING; FAST FOURIER TRANSFORMS; FREQUENCY DOMAIN ANALYSIS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; TIME DOMAIN ANALYSIS;

LOW-FREQUENCY NOISE; RANDOM TELEGRAPHIC SIGNALS (RTS);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036136219     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00896-5     Document Type: Article

References (4)