Plasma extraction transit time oscillations in bipolar power devices

Solid-State Electronics

Volumn 46, Issue 1, 2002, Pages 133-138

  Gutsmann, Bernd ^a   Mourick, Paul ^b   Silber, Dieter ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b Semikron Elektronik GmbH AndCo KG   (Germany)

Author keywords

Barrier injection transit time; EMC; IGBT; Plasma extraction transit time; Tail current

Indexed keywords

COMPUTER SIMULATION; ELECTROMAGNETIC COMPATIBILITY; IMPATT DIODES; NATURAL FREQUENCIES; PLASMA APPLICATIONS; PLASMA OSCILLATIONS; Q FACTOR MEASUREMENT;

PLASMA EXTRACTION TRANSIT TIME;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0036132246     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00184-8     Document Type: Article

References (5)

1. IEGT design concept against operation instability and its impact to application
2. Ultra high-power 2.5 kV-1800 A power pack IGBT