Six-degree of freedom micro force-moment sensor for application in geophysics

Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2002, Pages 312-315

  Dao, Dzung Viet ^a   Toriyama, Toshiyuki ^b   Wells, John ^a   Sugiyama, Susumu ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREES OF FREEDOM (MECHANICS); FORCE MEASUREMENT; GEOPHYSICS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUITS; METHOD OF MOMENTS; PIEZOELECTRIC DEVICES; PIEZOELECTRICITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TURBULENT FLOW;

FORCE SENSOR; MOMENT SENSOR; PIEZORESISTIVE EFFECTS; SENSING CHIP; SHEAR PIEZORESISTOR;

MICROSENSORS;

EID: 0036122198     PISSN: 10846999     EISSN: None     Source Type: Journal    
DOI: 10.1109/MEMSYS.2002.984265     Document Type: Article

References (9)

1. Flat-type six-axial force-sensor
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3. A planar capacitive force sensor
4. Triaxial normal and shear force sensor
5. Graphical representation of the piezoresistance coefficients in Si shear coefficients in plane
6. Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects
7. Piezoresistive properties of silicon diffused layers
8. Micro force-moment sensor with six-degree of freedom