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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 1, 2002, Pages 100-104

Simulations of field emission from a semiconducting (10,0) carbon nanotube

(3) Mayer, A a Miskovsky, N M b Cutler, P H b

a UNIVERSITY OF NAMUR (Belgium)

b PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; ENERGY GAP; FERMI LEVEL; MATHEMATICAL MODELS; OSCILLATIONS; POTENTIAL ENERGY; SEMICONDUCTOR DEVICES;

FIELD-EMISSION PROPERTIES;

CARBON NANOTUBES;

EID: 0036118705 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1428275 Document Type: Conference Paper

Times cited : (13)

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