SiGe/Si power HBTs for X- to K-band applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 289-292

  Mohammadi, Saeed ^a   Ma, Zhenqiang ^a   Park, Jaehoon ^a   Bhattacharya, Pallab ^a   Katehi, Linda P B ^a   Ponchak, George E ^b   Alterovitz, Samuel A ^b   Strohm, Karl M ^c   Luy, Johann Friedrich ^c  

^a University of Michigan   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; FREQUENCIES; GEOMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

HIGH PERFORMANCE POWER; SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036073039     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011614     Document Type: Article

References (3)

1. 1 watt, 65% PAE K-band AlGaAs/GaAs heterojunction bipolar transistors using emitter air-bridge technology
2. Si/SiGe power heterojunction bipolar transistors for Ku-band applications
3. A 180mW 18GHz Si/SiGe power heterojunction bipolar transistor