1 Watt, 65% PAE K-band AlGaAs/GaAs heterojunction bipolar transistors using emitter air-bridge technology

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 1997, Pages 219-222

  Chau, H F ^a   Hill, D ^a   Yarborough, R ^a   Kim, T ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

EMITTER AIR BRIDGE TECHNOLOGY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031345087     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)