0.25μm pHEMT 40Gb/s E/O modulator drivers

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 489-492

  Carroll, J M ^a   Coutant, M ^a   Heins, M S ^a   Campbell, C F ^a   Reese, E ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; INTEGRATED CIRCUITS; MICROSTRIP LINES; MODULATORS; TOPOLOGY; TRANSMISSION LINE THEORY;

DISTRIBUTED AMPLIFIERS; MODULATOR DRIVERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036070382     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. InP and GaAs components for 40 Gbps applications
2. Optical fiber systems: System overview and technology tradeoffs
3. 45-GHz distributed amplifier with a linear 6-Vp-p output for a 40-Gb/s LiNbO3 modulator driver circuit
4. A 12-dB high-gain monolithic distributed amplifier
5. A 14-Vpp 10Gbit/s E/O modulator driver IC