Linearity analysis of CMOS for RF application

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 279-282

  Kang, Sanghoon ^a   Choi, Byounggi ^a   Kim, Bumman ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT DENSITY; ELECTRIC CONDUCTANCE; ELECTRIC IMPEDANCE; LINEARIZATION; MATHEMATICAL MODELS; TRANSCONDUCTANCE;

OUTPUT CONDUCTANCE; SUBSTRATE LEAKAGE NETWORK;

CMOS INTEGRATED CIRCUITS;

EID: 0036070379     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. RF-CMOS performance trends
2. A nonlinear capacitance cancellation technique and its application to a CMOS class AB power amplifier
3. A new simple extraction method for higher order components of channel current in GaAs MESFET
4. A simple subcircuit extension of the BSIM3v3 model for CMOS RF design