Benefits of SiGe over silicon bipolar technology for broadband mixers with bandwidth above 10 GHz

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 1693-1696

  Hackl, Sabine ^a,b   Wurzer, Martin ^a   Böck, Josef ^a   Meister, Thomas F ^a   Knapp, Herbert ^a   Aufinger, Klaus ^a   Boguth, Sabine ^a   Treitinger, Ludwig ^a   Scholtz, Arpad L ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BIPOLAR TRANSISTORS; COMPUTER SIMULATION; MIXER CIRCUITS; MONOLITHIC INTEGRATED CIRCUITS; WIRELESS TELECOMMUNICATION SYSTEMS;

BROADBAND MIXERS; SILICON BIPOLAR TECHNOLOGY; SILICON GERMANIUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035686283     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967231     Document Type: Article

References (9)

1. 12 ps implanted base silicon bipolar technology
2. SiGe base bipolar technology for mixed digital and analogue RF applications
3. Fundamental aspects of modern active mixer design
4. 12-GHz Gilbert mixers using a manufacturable Si/SiGe epitaxial-base bipolar technology
5. 30 GHz active mixer in Si/SiGe bipolar technology
6. 20 GHz 5 dB gain analog multipliers with AlGaAs/GaAs HBTs
7. 15 dB gain, DC-20 GHz InP HBT balanced analog mixer and variable gain amplifier with 27 dB of dynamic range
8. Silicon bipolar double balanced active mixer MMICs for RF and microwave applications up to 6GHz
9. Low-noise, low-power monolithically integrated active 20 GHz mixer in SiGe technology