High performance RF passive integration on Si smart substrate

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2002, Pages 1561-1564

  Kim, Dong Wook ^a   Jeong, In Ho ^a   Sung, Ho Sung ^a   Kong, Tong Ook ^a   Lee, Jong Soo ^a   Nam, Choong Mo ^a   Kwon, Young Se ^b  

^a Telephus Inc   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INDUCTORS; INDUCTANCE; LOCAL AREA NETWORKS; SEMICONDUCTING SILICON; SILICA; SILICON WAFERS; SUBSTRATES;

BENZO CYCLO BUTENES; FRONT-END MODULES; INTEGRATED PASSIVE DEVICES; SILICON SMART SUBSTRATE;

INTEGRATED CIRCUIT LAYOUT;

EID: 0036065734     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1012154     Document Type: Article

References (5)

1. Silicon as microwave substrate
2. A new millimeter-wave IP-chip on silicon substrate
3. Monolithic planar inductor and waveguide substrate on silicon with performance comparable to those in GaAs MMIC
4. High performance planar inductor on oxidized porous Silicon(OPS) substrate
5. + substrate with resonant frequency of 20GHz