Influence of the dielectric on the growth and performance of pentacene thin film transistors

Materials Research Society Symposium - Proceedings

Volumn 708, Issue , 2002, Pages 251-256

  Knipp, D ^a   Street, R A ^a   Krusor, B ^a   Ho, J ^a   Apte, R B ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; THRESHOLD VOLTAGE; X RAY DIFFRACTION ANALYSIS;

DEVICE PROPERTIES; INVERTED STAGGERED TRANSISTORS; PENTACENE;

THIN FILM TRANSISTORS;

EID: 0036054161     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)