Extended (180 V) voltage in 0.6 μm thin-layer-SOI A-BCD3 technology on 1 μm BOX for display, automotive & consumer applications

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 77-80

  Ludikhuize, Adriaan W ^a   Van der Pol, J A ^a   Heringa, A ^a   Padiy, A ^a   Ooms, E R ^a   Van Kessel, P ^a   Hessels, G J J ^a   Swanenberg, M J ^a   Van Velzen, B ^a   Van der Vlist, H ^a   Egbers, J H H A ^a   Stoutjesdijk, M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COPPER PLATING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; METALLIZING; MOS DEVICES; SWITCHING;

POWER SWITCHING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036053409     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. A-BCD, an economic 100 V Resurf SOI BCD technology
2. Performance and innovative trends in Resurf technology
3. Smart power approaches VLSI complexity
4. Power BiCMOS process for 20 V mixed signal
5. 700 V thin-SOI Resurf
6. Thin-layer SOI HV-MOS device
7. Lateral 10-15 V DMOST