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Volumn , Issue , 2002, Pages 54-55
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Highly manufacturable sub-100 nm DRAM integrated with full functionality
a a a a a a a a a a a a a a a a a a a a more.. |
Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
CAPACITORS;
CHEMICAL VAPOR DEPOSITION;
GATES (TRANSISTOR);
POLYSILICON;
PARASITIC CAPACITANCE;
DYNAMIC RANDOM ACCESS STORAGE;
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EID: 0036050030
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (4)
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