A 16 kb 1T1C FeRAM testchip using current-based reference scheme

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2002, Pages 107-110

  Siu, Joseph Wai Kit ^a   Eslami, Yadollah ^a   Sheikholeslami, Ali ^a   Gulak, P Glenn ^a   Endo, Toru ^a   Kawashima, Shoichiro ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITORS; COMPUTER SIMULATION; ELECTRIC CURRENT CONTROL; FERROELECTRIC MATERIALS; MICROPROCESSOR CHIPS; THRESHOLD LOGIC; VOLTAGE CONTROL;

FERROELECTRIC CAPACITORS; FERROELECTRIC RANDOM ACCESS MEMORY (FERAM) DESIGNS;

RANDOM ACCESS STORAGE;

EID: 0036045323     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. A 0.4 μm 3.3V 1T1C 4Mb nonvolatile ferroelectric RAM with fixed bit-line reference voltage scheme and data protection circuit
2. A 256kb nonvolatile ferroelectric memory at 3V and 100ns
3. A survey of circuit innovations in ferroelectric random-access memories