An investigation of the structural and thermal transfer characteristics of commercial power mosfet devices using experimental and modelling techniques

IEE Conference Publication

Volumn , Issue 487, 2002, Pages 562-567

  Pritchard, L S ^a   Johnson, C M ^a   Acarnley, P P ^a   Horsfall, A B ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HEAT TRANSFER; MICROSCOPIC EXAMINATION; THERMOELECTRICITY; TRANSIENTS;

STEADY-STATE THERMAL MODEL;

MOSFET DEVICES;

EID: 0036036222     PISSN: 05379989     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/cp:20020178     Document Type: Conference Paper

References (6)

1. Mounting guidelines for the SUPER-220
2. Modelling of self-heating effect in thin SOI and partial SOI LDMOS power devices
3. Instantaneous junction temperature evaluation of high-power diodes (Thyristors) during current transients