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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 2108-2112

Positive resist for KrF excimer laser lithography

(6) Park, S J a Kim, I H a Kang, Y J a Lee, H a Lee, S H b Choi, S J b

a Hanyang University (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COPOLYMERS; EXCIMER LASERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FREE RADICAL POLYMERIZATION; GEL PERMEATION CHROMATOGRAPHY; MOLECULAR STRUCTURE; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; SYNTHESIS (CHEMICAL); THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS; ULTRAVIOLET SPECTROSCOPY;

ACID CATALYZED DEPROTECTION; ACRYLIC SILICON; EXCIMER LASER LITHOGRAPHY; HYDROXYSTYRENE; POLYMER STRUCTURE; POSITIVE RESISTS;

PHOTORESISTS;

EID: 0036026388 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1511213 Document Type: Article

Times cited : (7)

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