Modeling Transient Diffusion following High Enlergy Implantation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 791-794

  Rafferty, C S ^a   Gossmann, H J ^a   Kamgar, A ^a   Jacobson, D C ^a   Lloyd, E J ^a   Hillenius, S J ^a   Vuong, H H ^a   Becerro, J ^b   Vaidya, H M ^b   Lytle, S A ^b   Thoma, M J ^b   Luftman, H S ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL PROFILE; CMOS FLOW; DIFFUSION EFFECTS; HIGH ENERGY IMPLANTATION; LOWS-TEMPERATURES; SURFACE PROFILES; TRANSIENT DIFFUSION; TRANSIENT ENHANCED DIFFUSION;

TEMPERATURE; DIFFUSION;

BORON; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SURFACES;

GAUSSIAN BROADENING; HIGH ENERGY IMPLANTATION; TRANSIENT ENHANCED DIFFUSION; TUB FORMATION;

EID: 0030416120     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554098     Document Type: Conference Paper

References (8)

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