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Volumn 19, Issue 4, 2002, Pages 492-494
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Process of energetic carbon atom deposition on Si (001) substrate by molecular dynamics simulation
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
ATOMS;
CARBON;
DEPOSITION;
MOLECULAR DYNAMICS;
SILICON CARBIDE;
SUBSTRATES;
ATOM DEPOSITION;
C ATOMS;
CARBON ATOMS;
DIFFUSION PROCESS;
INCIDENT ENERGY;
MOLECULAR DYNAMICS METHODS;
SEMI-EMPIRICAL;
SI (001) SUBSTRATE;
SI(0 0 1);
SUBSTRATE ATOM;
FILM GROWTH;
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EID: 0036011816
PISSN: 0256307X
EISSN: None
Source Type: Journal
DOI: 10.1088/0256-307X/19/4/313 Document Type: Article |
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Times cited : (5)
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References (11)
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